Resonant tunneling of twodimensional electrons iinto one. However, it should be noted that the interaction with phonons might be. Chapter 4 alasgaas double barrier resonant tunneling diodes. A resonant tunneling structure consists of a thin qw made of a semiconductor a es. Theory we assume for our resonant structures that the incoherent electron scattering, spacecharge effects, manyelectron effects and phononassisted tunneling are neglected. Using quantum confinement to uniquely identify devices. Government microelectronics applications conference gomac98. Thus, one can say that the fundamental requirement for this process. A comparison of the i v curves of the edge 2deg device and a representative bulk device is shown in fig. The resonanttunneling diode has also been used in fast pulseforming circuits and trigger circuits. By combining rtds with ntype transistors of conventional com plementarymetal oxide semiconductor cmos devices, a new quantum mos qmos familyof. Resonant tunneling of doublebarrier quantum wells affected by interface roughness e. A resonant tunneling diode 400 made of a silicon quantum well 406 with silicon oxide tunneling barriers 404, 408.
Resonant tunneling through doublebarrier structures. Modeling of double barrier resonant tunneling diodes. Increased peak current in alasgaas resonant tunneling. The resonant tunneling diode rtd has been widely studied because of its. Resonant tunneling through doublebarrier structures on. Winner of the standing ovation award for best powerpoint templates from presentations magazine. Nov 10, 2015 using quantum confinement to uniquely identify devices. This process is experimental and the keywords may be updated as the learning algorithm improves. All types of tunneling diodes make use of quantum mechanical tunneling. Occurs when an electron passes through a potential barrier without having enough energy to do so. Theyll give your presentations a professional, memorable appearance the kind of sophisticated look that. In recent years, resonant tunneling diode rtd has attracted growing interest on the applications of highly sensitive strain gauge.
The physics of ndr region is based on quantum electron tunneling from the emitter to the energy level in the cen. The device is, therefore, operating as an optical gate. Electrons tunnel through two barriers separated by a well in flowing source to drain in a resonant tunneling diode. If the structure includes an emitter spacer layer with its con. Resonant tunneling an overview sciencedirect topics. As to quantummechanical resonant tunneling, we shall compare our results with ref. This report is a summary of the activities in the field of resonant tunneling device circuit design. A lienard oscillator resonant tunnelling diodelaser diode hybrid integrated circuit. Gainnasgaas quantum well, we present a low dimensional, wide range. Resonant tunneling of doublebarrier quantum wells affected. Resonant tunneling device with multiple negative differential resistance. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. Resonant tunneling diodes rtds have been a subject of considerable interest among scientists. Resonant tunneling diodes rtd exhibit iv characteristics with a negative differential resistance ndr region.
Theory of operation and applications johnny ling, university of. A familiar fact in the realm of physics is that on very small size scales, some of the. The simplified 3d view of the device constructed by lumerical software fig. Simulation of resonant tunneling diodes using atlas. Color image processing with multipeak resonant tunneling diodes 18. Resonant tunneling the quintessential resonanttunneling device is the resonant tunneling diode rtd, which can be described as a quantum well with electrically leaky barriers.
We show that a nonresonant laser beam, focused ontothe island, can modulate thertdtransmissionwithapeaktovalleyratioashighas 28. The model is based on a selfconsistent solution of poisson and nonequilibrium greens function negf equations with an effective mass hamiltonian. This is a quantum device not to be confused with the esaki tunnel diode, ch 3, a conventional heavily doped bipolar semiconductor. The iv characteristics of the tunneling diode are shown in figure 2. Gaas or gan limited by two barriers made of semiconductor b with a higher conduction band potential energy es. This structure is typically formed epitaxially by the precise growth of dissimilar semiconductor materials to produce energy band discontinuities at the layer interfaces. The report will include a theoretical treatment of the following aspects. Mounaix et alto observed the resonant tunneling from the localized states in the accumulation layer, and jogai et al. The tunneling barriers have openings 430 of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height, and the openings 430 have an irregular nonperiodic shape.
Elastic and inelastic tunneling processes have also been identi. This will serve as a starting point for the optimization of such ir lasers. Insertion of a thin nonmagnetic copper cu001 layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the cu layer thickness. Resonance width control voltage resonant tunneling resonant tunneling diode resonator length these keywords were added by machine and not by the authors. From resonant tunneling diodes to quantum cascade lasers. Us5606177a silicon oxide resonant tunneling diode structure. Color image processing with multipeak resonant tunneling.
Resonant tunneling diode is an important advancement to this problem. Figure 3 showing data for another transistor, device b, illustrates the reproducibility of the iv characteristics for different devices and. Ppt resonant tunneling diodes rtds powerpoint presentation. Experiments below 100 k reveal conductance oscillations in the measured tunneling current and point to resonant transport through discrete unoccupied electronic states confined to. Pdf the resonant tunneling diode rtd has been widely studied because of its importance in the. This thesis addresses several important issues of the physics and applications of double barrier resonant tunneling devices on which the author worked during his graduate study at caltech. This property finds numerous applications in ultrafast circuits, amplifiers, oscillators, frequency converters, etc. Iv characteristic of a resonant tunneling diode top and side view and top view of the multipeak rtdbased image processor bottom. Applications of rtds zseveral applications exploit negative differantial resistance ndr of rtds zresonant tunneling transistors to make a three terminal tunneling device rtds are merged with conventional transistors and resonant tunneling bipolar transistors, resonant tunneling hot electron transistors and.
As seen, the process of resonant tunneling implies the existence of metastable states in the potential barrier region. A resonanttunneling diode rtd is a diode with a resonanttunneling structure in which. The effect is interpreted in terms of the formation of spinpolarized resonant tunneling. Analytical modeling of silicon based resonant tunneling diodes for.
The proposal 1 and later confirmation 2 of the resonant tunneling concept led to the investigation of double barrier structures for various applications. Resonant tunneling tunneling is a quantum mechanical phenomenon with no analogy in classical physics. Resonant tunneling diodes could we try to improve on qcls learning from rtds. Jiang department ofphysics, cardwell hall, kansas state university, manhattan, kansas 66506 received 17 april 1989.
Experiments below 100 k reveal conductance oscillations in the measured tunneling current and point to resonant transport through discrete unoccupied electronic states confined to the wall 4, 184. Realization of a doublebarrier resonant tunneling diode. The currentvoltage characteristic often exhibits negative differential resistance regions. Resonant tunneling in quantum mechanics euclidean instanton method functional schr odinger method resonant tunneling in qft resonant tunneling in quantum field theory dan wohns cornell university work in progress with s. Wie state university of new york at buffalo, department of electrical,and computer engineering and iiiv semiconductor materials and devices laboratory, bonner hall, bufialo, new york 14260.
Henry tye september 18, 2009 dan wohns resonant tunneling in quantum field theory 6. Potential and limitations of resonant tunneling diodes. Resonant tunneling can be described by the transmission and reflection processes of coherent electron waves through the. Pdf resonant tunneling across a ferroelectric domain wall. The preceding discussion has dealt with the bulkcarrier tunneling into a 2d density of electronic states. Resonant tunneling times in superlattice structures. The currentvoltage characteristic often exhibits negative differential resistance regions all types of tunneling diodes make use of quantum mechanical tunneling.
Alasgaas double barrier resonant tunneling diodes 4. However, instead of the current going through a channel. Jul 12, 2002 insertion of a thin nonmagnetic copper cu001 layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the cu layer thickness. A resonanttunneling diode rtd is a diode with a resonanttunneling structure in which electrons can tunnel through some resonant states at certain energy levels. Johnny ling, university of rochester, rochester, ny 14627 brief overview of nanoelectronic devices, james c. In addition to this, quantum oscillation is seen when the resonant tunneling condition is fulfilled f. In some device applications tunneling is required for the operation of the device resonant tunneling diodes. A simplified explanation of the resonant tunnelling diode rtd as an oscillator. The nonlinear transmission line nltl steepens the wavefront of a microwave source and compresses the wavefront. Paper 10ghz operation of multiplevalued quantizers using.
Resonant tunnelling and negative differential conductance in. Quantum transport devices based on resonant tunneling. Resonanttunneling diode wikipedia, the free encyclopedia. Physics and applications of resonant tunneling devices. Nanothermometer based on resonant tunneling diodes core. Worlds best powerpoint templates crystalgraphics offers more powerpoint templates than anyone else in the world, with over 4 million to choose from. Models and properties article pdf available in proceedings of the ieee 864. Hagelstein research laboratory of electronics, massachusetts institute of technology, cambridge, ma 029,usa email. Theoretical investigation of the resonant tunneling phenomena. Resonant interband tunneling diodes ritds combine the structures and behaviors of both intraband resonant. Resonant tunnelling and negative differential conductance. Quantum devices solidstate device theory electronics. A resonant tunneling diode based monostable multivibrator. This article describes a model for resonant tunneling diodes rtds implemented within atlas framework.
The resonant tunneling diode rtd is a doublebarrier device that can sustain an electronic oscillation at high frequencies suzuki et al. Piecewise constant potential barrier tool matlab code. Finally, we evidence strong asymmetry in the transmission. The resonant tunneling through graphenebased double barriers has been studied by pereira et al. Same device covers from the optics to the electronics. Resonant tunneling negative differential resistance ieee electron device resonant tunneling diode double barrier these keywords were added by machine and not by the authors.
Where there is a reverse bias voltage, the current becomes extremely large. Thus, it should be interesting to combine both quantum devices. Realization of a doublebarrier resonant tunneling diode for. Resonant tunneling diode rtd rtd, resonant tunneling diode. Resonant tunneling in doublequantumwell triplebarrier. The resonant tunneling current will be calculated using the transfer matrix method. Our new crystalgraphics chart and diagram slides for powerpoint is a collection of over impressively designed datadriven chart and editable diagram s guaranteed to impress any audience. Ndr to occur in a resonant tunneling structure is the reduced dimensionality of electronic states. Figure 3 shows the electron density distribution near the barrier in the electrode i.
Chart and diagram slides for powerpoint beautifully designed chart and diagram s for powerpoint with visually stunning graphics and animation effects. Tunneling is fully quantummechanical effect that does not have classical analog. Mechanism of operation of doublebarrier resonanttunneling. Capasso and myself proposed a novel emitter 1 contact fig. Resonant tunneling devices on soi basis springerlink. Threebarrier, twowell resonant tunneling structure. Introduction over the past two decades, resonant tunneling diodes rtds have received a great deal of attention following the pioneering work by esaki and tsu 1.
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